THEORETICAL AND COMPARATIVE STUDY OF THE DEPENDENCE OF ELECTRICAL CONDUCTIVITY MECHANISMS IN PURE AND DOPED SILICON ON TEMPERATURE AND IMPURITY CONCENTRATION

Abstract

This article presents a theoretical and comparative investigation of the physical mechanisms of electrical conductivity in pure and doped silicon as a function of temperature and impurity concentration. Simplified physical models were used to evaluate the intrinsic charge-carrier concentration, electron and hole mobility, and electrical conductivity. The calculations were performed using a silicon band-gap energy of Eg = 1.12 eV, a Boltzmann constant of k = 8.617×10⁻⁵ eV/K, and a temperature range of 200–800 K. For pure silicon, the exponential dependence of the intrinsic carrier concentration on temperature was numerically evaluated. For doped silicon, the increase in conductivity with increasing carrier concentration over the range Nd = 10¹⁴–10¹⁸ cm⁻³ and the decrease in mobility at high concentrations due to ionized-impurity scattering were comparatively analyzed. The physical significance of the freeze-out, extrinsic, and intrinsic conductivity regimes in doped silicon was substantiated. The results demonstrate the need to consider temperature, doping level, and carrier mobility simultaneously when optimizing electrical conductivity.