MODIFICATION OF ELECTROPHYSICAL PROPERTIES OF SILICON-BASED SEMICONDUCTOR STRUCTURES UNDER THE INFLUENCE OF LASER BEAMS

Authors

  • Batirov Behzod Baratovich Andijan state technical institute

DOI:

https://doi.org/10.37547/

Keywords:

laser radiation, semiconductor, silicon, electrical conductivity, power engineering, electrophysical properties.

Abstract

The article investigates the modification of electrophysical properties of silicon-based semiconductor structures under laser irradiation. It is shown that laser treatment significantly affects electrical conductivity, surface characteristics, and energy efficiency of semiconductor materials. The obtained results expand the possibilities of effective application of semiconductor elements in microelectronics, power engineering, and modern technical devices.

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References

1.Sze S.M. Physics of Semiconductor Devices. – New York: Wiley, 2012.

2.Ready J.F. Industrial Applications of Lasers. – Academic Press, 2010.

3.Madumarov T., Karimov A. Physics of semiconductors. – Tashkent, 2018.

4.Ganiyev B. Application of laser technologies in technology // Scientific journal, 2021.

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Published

2026-07-06

How to Cite

MODIFICATION OF ELECTROPHYSICAL PROPERTIES OF SILICON-BASED SEMICONDUCTOR STRUCTURES UNDER THE INFLUENCE OF LASER BEAMS. (2026). International Bulletin of Applied Science and Technology, 6(7), 5-7. https://doi.org/10.37547/

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