THEORETICAL AND COMPARATIVE STUDY OF THE DEPENDENCE OF ELECTRICAL CONDUCTIVITY MECHANISMS IN PURE AND DOPED SILICON ON TEMPERATURE AND IMPURITY CONCENTRATION. International Bulletin of Applied Science and Technology, [S. l.], v. 6, n. 9, p. 5–11, 2026. DOI: 10.37547/. Disponível em: https://researchcitations.com/index.php/ibast/article/view/7657. Acesso em: 10 sep. 2026.