MODIFICATION OF ELECTROPHYSICAL PROPERTIES OF SILICON-BASED SEMICONDUCTOR STRUCTURES UNDER THE INFLUENCE OF LASER BEAMS. International Bulletin of Applied Science and Technology, [S. l.], v. 6, n. 7, p. 5–7, 2026. DOI: 10.37547/. Disponível em: https://researchcitations.com/index.php/ibast/article/view/7450. Acesso em: 18 aug. 2026.